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| ST8812FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED TIGHT hfe CONTROL LARGE R.B.S.O.A. FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING Applications SWITCH MODE POWER SUPPLIES FOR CRT TV TO-220FP Description The ST8812FP is manufactured using latest Multi Epitaxial Planar technology with high voltage capability. It shows wide R.B.S.O.A. and high switching speed thanks to its Cellular Emitter structure with planar edge termination and deep base diffusion. Internal Schematic Diagram www..com Order codes Part Number ST8812FP Marking ST8812FP Package TO-220FP Packing TUBE rev.1 1/10 www.st.com 10 November 2005 1 Electrical Ratings ST8812FP 1 Table 1. Symbol VCBO VCEO VEBO IC ICM IB PTOT Visol TSTG TJ Electrical Ratings Absolute Maximum Rating Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitte-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Total dissipation at Tc = 25C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 600 15 7 12 4 36 1500 -65 to 150 150 Unit V V V A A A W V C C Table 2. Symbol RthJ-case Thermal Data Parameter Thermal Resistance Junction-Case__________________ __Max Value 3.47 Unit C/W www..com 2/10 ST8812FP 2 Electrical Characteristics 2 Electrical Characteristics (TCASE = 25C; unless otherwise specified) Table 3. Symbol ICES IEBO Electrical Characteristics Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCE = 1150V VCE = 1150V VEB = 14V IC = 100mA IC = 4A _____ IC = 4A ___ IC = 4A ____ IC = 1A _____ IB = 0.8A __ IB = 1.2A _ IB = 0.8A VCE = 5V VCE = 1V VCE = 5V _ RBB= 0 V BE(off) = -5V _ LC= 220H 4.5 25 5 9 600 3 1.5 1.3 Tc= 125C Min. Typ. Max. 1 2 1 Unit mA mA mA V V V V VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 5A _____ IC = 5A _____ ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4A ____ VClamp = 480V IB1 = 0.8A (See Figure 8) 1 60 1.6 120 s ns Note: 1 Pulsed duration = 300 s, duty cycle 1.5%. www..com 3/10 2 Electrical Characteristics ST8812FP 2.1 Typical characteristicsTest circuit DC Current Gain Figure 2. DC Current Gain Figure 1. Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage www..com Figure 5. Inductive Load Storage Time Figure 6. Inductive Load Fall Time 4/10 ST8812FP Figure 7. Reverse Biased S.O.A. 2 Electrical Characteristics www..com 5/10 2 Electrical Characteristics ST8812FP Figure 8. Inductive Load Switching Test Circuit www..com 6/10 ST8812FP 3 Package Mechanical Data 3 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. www..com 7/10 3 Package Mechanical Data ST8812FP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B www..com L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 8/10 G ST8812FP 4 Revision History 4 Revision History Date 17-Nov-2005 Revision 1 Initial release. Changes www..com 9/10 4 Revision History ST8812FP www..com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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